tsc966 npn silicon planar high voltage transistor 1/5 version: d12 to - 92 sot - 223 product summary bv cbo 600v bv ceo 400v i c 300ma v ce(sat) 0.5v @ i c / i b = 50ma / 5ma features high bvceo, bvcbo high current gain ordering information part no. package packing tsc966ct b0 to-92 1kpcs / bulk tsc966ct a3 to-92 2kpcs / ammo tsc966cw rpg sot-223 2.5kpcs / 13 reel note: g denote for halogen free product structure epitaxial planar type absolute maximum rating (t a =25 o c unless otherwise noted) parameter symbol limit unit collector-base voltage v cbo 600 v collector-emitter voltage v ce s 600 v collector-emitter voltage v ceo 400 v emitter-base voltage v ebo 7 v collector current dc i c 0.3 a pulse 1 total power dissipation @ t a =25 o c to-92 p tot 0.9 w sot-223 1 operating junction temperature t j +150 o c operating junction and storage temperature range t stg - 55 to +150 o c electrical specifications (ta = 25 o c unless otherwise noted) parameter conditions symbol min typ max unit collector-base breakdown voltage i c = 50ua bv cbo 600 -- -- v collector-emitter saturation voltage i c = 100ua, v b e = 0 bv c es 600 -- -- v collector-emitter breakdown voltage i c = 1ma bv ceo 400 -- -- v emitter-base breakdown voltage i e = 50ua bv ebo 7 -- -- v collector-base cutoff current v cb = 600v i cbo -- -- 0.5 ua collector-emitter cutoff current v c e = 400v i c e o -- -- 1 ua emitter-base cutoff current v eb = 7v i ebo -- -- 1.5 ua collector-emitter saturation voltage i c = 50ma, i b = 5ma v ce(sat) -- -- 0.5 v base-emitter saturation voltage i c = 50ma, i b = 5ma v be(sat) -- -- 1 v dc current transfer ratio v ce = 5v, i c = 1ma h fe 1 100 -- -- v ce = 5v, i c = 20ma h fe 2 90 -- 300 transition frequency v ce = 10v, i e = 20ma f t 50 -- -- mhz output capacitance v cb = 20v, f=1mhz cob -- -- 7 pf pin definition : 1. emitter 2. collector 3. base pin definition : 1. base 2. collector 3. emitter
tsc966 npn silicon planar high voltage transistor 2/5 version: d12 electrical characteristics curve (ta = 25 o c, unless otherwise noted) figure 1. static characteristics figure 2. dc current gain figure 3. vce(sat) v.s. ic figure 4. vbe(sat) vs ic figure 5. vbe(on) vs ic figure 6. safety operation area
tsc966 npn silicon planar high voltage transistor 3/5 version: d12 to-92 mechanical drawing marking diagram y = year code m = month code ( a =jan, b =feb, c =mar, d =apl, e =may, f =jun, g =jul, h =aug, i =sep, j =oct, k =nov, l =dec) l = lot code to-92 dimension dim millimeters inches min max min max a 4.30 4.70 0.169 0.185 b 4.30 4.70 0.169 0.185 c 14.30(typ) 0.563(typ) d 0.43 0.49 0.017 0.019 e 1.18 1.28 0.046 0.050 f 3.30 3.70 0.130 0.146 g 1.27 1.31 0.05 0.051 h 0.37 0.43 0.015 0.017
tsc966 npn silicon planar high voltage transistor 4/5 version: d12 sot-223 mechanical drawing marking diagram y = year code m = month code for halogen free product ( o =jan, p =feb, q =mar, r =apl, s =may, t =jun, u =jul, v =aug, w =sep, x =oct, y =nov, z =dec) l = lot code sot-223 dimension dim millimeters inches min max min max a 6.350 6.850 0.250 0.270 b 2.900 3.100 0.114 0.122 c 3.450 3.750 0.136 0.148 d 0.595 0.635 0.023 0.025 e 4.550 4.650 0.179 0.183 f 2.250 2.350 0.088 0.093 g 0.835 1.035 0.032 0.041 h 6.700 7.300 0.263 0.287 i 0.250 0.355 0.010 0.014 j 10 16 10 16 k 1.550 1.800 0.061 0.071
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